Tatanlum carbide TaC sputtering target

Tatanlum carbide TaC sputtering target use in thin film coating CAS 12070-06-3

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US $ 200 / pc

Minimum Order︰

1 pc

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Product Description


Tantalum carbide, TaC sputtering

Purity: 99.5%

Sputtering Targets : Diameter: 355.6mm (14") max. 

Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, 

if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree


Molecular Weight: 192.956, density: 14.3g/cm3, (13.9g/cm3), melting point: 3880°C, boiling point:5500℃

Tantalum carbides are extremely hard, brittle, refractory ceramic materials with metallic electrical conductivity.
They appear as brown-gray odorless or dark to light brown powders which are usually processed by sintering. Being important cermet materials, tantalum carbides are commercially used in tool bits for cutting applications and are sometimes added to tungsten carbide alloys. The melting points of tantalum carbides peak at about 3880 °C depending on the purity and measurement conditions; this value is among the highest for binary compounds. Only tantalum hafnium carbide has a distinctly higher melting point of about 4215 °C, whereas the melting point of hafnium carbide is comparable to that of TaC.

Applications: For tantalum metal billets and powder, tantalum carbide, ceramic capacitors and additive in special optical glass.
Tantalum carbide is often added to tungsten carbide/cobalt (WC/Co) powder attritions to enhance the physical properties of the sintered structure. It also acts as a grain growth inhibitors preventing the formation of large grains, thus producing a materials of optimal hardness.

It is also used as a coating for steel moulds in the injection moldings of aluminum alloys. While providing a hard, wear resistant surface, it also provides a low friction mould surface. Tantalum carbide is also used in the production of sharp instruments with extreme mechanical resistance and hardness. It is also used in tool bits for cutting tools.


We also supply below carbide sputtering targets material:
Chromium Carbide Cr2C3, CrC
Hafnium Carbide  HfC
Niobium Carbide  NbC
Silicide Carbide  SiC
Tantalum Carbide  TaC
Titanium Carbide  TiC
Tungsten Carbide  WC
Vanadium Carbide  VC
Zirconium Carbide  ZrC
Tantalum Hafnium Carbide   Ta4HfC5

specification︰ 99.9%, dia.14" max
Label︰ Tatanlum carbide TaC sputtering target

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Tatanlum carbide TaC sputtering targetTatanlum carbide TaC sputtering target

offering sputtering targets, evaporation material, rare earth metal, rare earth oxide, chemistry reagent


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