Tantalum nitride TaN sputtering targets CAS 12033-62-4
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US $ 200 / pc
Tantalum Nitride (TaN) sputtering target
Size: Diameter: 355.6mm (14") max.
Single piece Size: Length: <350mm, Width: <250mm, Thickness: >1mm,
if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree
Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing
Molar mass: 194.955 g/mol,
Appearance: black crystals,
Density: 14.3 g/cm3,
Melting point: 3090 °C, 3363 K, 5594 °F.
Solubility in water insoluble. It is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and have other electronic applications
Element percentages for the elements in tantalum nitride: Ta/N=92.82/7.18at%
Tantalum nitride (TaN) thin film is attractive material as a diffusion barrier coating and used in electronics industry. TaN thin film is fabricated by some method such as DC sputtering, CVD and pulse laser deposition. In this study, TaN thin film was deposited on Si (111) wafer, soda glass substrates by reactive sputtering at low vacuum conditions for reducing energy costs. N2/Ar gas mass flow rate was ranged from 9 to 23% at N2 gas. At lower N2 gas flow, crystalline TaN thin films were obtained. Amorphous like TaN thin films were observed at other rate range using XRD. Ta oxide layer was observed between the crystalline TaN film and both of Si wafer and glass substrates by GDS depth profiling. Film thickness was 200- 400 nm. The TaN layer deposited on Si and glass substrate in 9 % N2 flow having columnar structure was observed in these films by FE-SEM.
Fabrication of Tantalum nitride thin film using the low vacuum magnetron sputtering system.
Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering
A barrier metal used in Cu metallization scheme. Tantalum nitride (TaN) films have been shown to provide a barrier to copper diffusion while at the same time promoting good adhesion between the copper lines and the surrounding interlevel dielectric (ILD).
We also supplying other nitride targets material as following:
Aluminum Nitride , AlN target
Boron Nitride, BN target
Hafnium Nitride, HfN target
Niobium Niride , NbN target
Silicom Nitride , Si3N4 target
Tantalum Nitride , TaN target
Titanium Carbon nitride , TiCN target
Titanium Nitride, TiN target
Tungsten Nitride, WN targets
Vanadium Nitride , VN target
Zirconium Nitride , ZrN target