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Hafnium oxide (HfO2) is one of the most refractory oxide ceramic materials available.our produces high purity HfO2 sputtering targets, thin film coating material and HfO2 stabilized with calcium oxide (CaO), HfO2-CaO, HfO2 stabilized with yttrium oxide (Y2O3), HfO2-Y2O3.
Hafnia is used in optical coatings, and as a high-k dielectric in DRAM capacitors. Hafnium-based oxides are currently leading candidates to replace silicon oxide as a gate insulator in field effect transistors. The advantage for transistors is its high dielectric constant: The dielectric constant of HfO2 is 25, while the dielectric constant of SiO2 is only 3.9.[1]
Application:
Ceramics, Thin film coating, Optical thin film, Electric thin film, PVD thin film, Superconducting thin film, Protective thin film, surface thin film, IC coating, Vacuum evaporation coating, color coating, Optical Communication, Enameling, Display industry
Methods of production: Vacuum sinter, Vacuum hot press, Hot isostatic pressing (HIP), Cold isostatic pressing (CIP), Spraying, Pressure casting process
Machinery: Hot-press equipment, Hot/Cold rolling equipment, Hot/Cold isostatic pressing equipment, vacuum casting equipment, forging equipment, Surface grinding machine, Precision turning machine,
Material: HfO2, HfO2-Y2O3, HfO2-CaO
apply: sputtering targets, thin film coating mateiral
Diameter:
Diameter: 355.6mm (14") max.
Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.
color: snow white
Evaporation material: Most of those material can be offered in powder, lump, pellet, rod, sheet, tablets, discs, plate, tube made from hot press or cold press or vacuum sinter.
Color: gray black and snow white
Size: 1-3mm pieces, 10 x 8 or 13 x 10 or made per requested
Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as thermocouples, where it can operate at temperatures up to 2500 °C.[3]
Hafnium Oxide is applied to carbon nanotube-based Non-Volatile RAM (NVRAM), where it replaces silicon dioxide as the insulating layer. This switch in material decreased the amount of time to access the memory from several milliseconds to just around 100 nanoseconds thereby potentially increasing the reading and writing to NVRAM by a factor of 100,000.[4]
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| Packing︰ | vacuum |
| specification︰ | 99.99% purity |
| advantage︰ | very competitory price and high quality with quickly delivery time and good service |
| Minimum Order︰ | 1 piece |
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