Geranium Antimony Telluride GeSbTe GST alloy target used in rewritable optical

Geranium Antimony Telluride (GeSbTe) GST alloy sputtering targets

Purity: 99.99%

​Comoposition: Ge/Sb/Te=1/1/1at, Ge/Sb/Te=2/2/5at, and made by request.

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

 GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications.  It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C.

Applications in phase-change memory​, Threshold switching​, Nano-timescale phase change​, Nucleation-domination versus growth-domination

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target      

Antimony Telluride, SbTe, Sb2Te3 target       

Bismuth Telluride , Bi2Te3, BiTe target  

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target       

Copper Telluride , CuTe, Cu2Te target      

Gallium Telluride , GaTe target       

Geranium Telluride , GeTe target      

Geranium Antimony Telluride , Ge-Sb-Te target       

Lead Telluride , PbTe target   

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target       

Niobium Telluride, NbTe2 target       

Silver Telluride, Ag2Te target      

Tantalum Telluride, TaTe2 target       

Tungsten Telluride , WTe2, sputtering target       

Zinc Telluride , ZnTe target