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Tantalum nitride TaN sputtering targets CAS 12033-62-4


TYR can supply that Tantalum Nitrite (TaN) sputtering target with bonding service now.

Purity: 99.5%

Size: Diameter: 355.6mm (14") max.

Single piece Size: Length: <350mm, Width: <250mm, Thickness: >1mm,

if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing

Molar mass: 194.955 g/mol,

Appearance: black crystals,

Density: 14.3 g/cm3,

Melting point: 3090 °C, 3363 K, 5594 °F.

Fabrication of Tantalum nitride thin film using the low vacuum magnetron sputtering system.
Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering
A barrier metal used in Cu metallization scheme. Tantalum nitride (TaN) films have been shown to provide a barrier to copper diffusion while at the same time promoting good adhesion between the copper lines and the surrounding interlevel dielectric (ILD).


offering sputtering targets, evaporation material, rare earth metal, rare earth oxide, chemistry reagent


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