Huizhou Tian Yi Rare Material Co.,Ltd

Iron phosphide Fe3P, FeP granules CAS 12023-53-9

Huizhou Tian Yi Rare Material Co.,Ltd — Tue, 04-Mar-08 18:50:00 GMT

Iron phosphide Fe3P, FeP granules

Chemical formula: Fe3P, FeP
Molar mass: 198.51 g·mol−1
Density: 6.74 g/cm3
Melting point: 1,100 °C (2,010 °F; 1,370 K)
Solubility in water, Insoluble in water

Iron phosphide is a chemical compound of iron and phosphorus, with a formula of Fe3P. Its physical appearance is grey, hexagonal needles. Manufacturing of iron phosphide takes place at elevated temperatures, where the elements combine directly. Iron phosphide reacts with moisture and acids causing dangerous effects. The product could be a flame or a toxic substance.
Iron phosphide can be used as a semiconductor. It has use in high power, high frequency applications, such as laser diodes.

We also can supply other kinds of half semiconductor mateiral, like as Selenide, Sulfide, Telluride, Antimonide material

Cadmium Telluride CdTe sputtering targets use in thin film coating CAS 1306-25-8

Huizhou Tian Yi Rare Material Co.,Ltd — Thu, 02-Aug-12 09:38:39 GMT

Cadmium Telluride, CdTe sputtering targets

Purity: 99.99%, 99.999%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is used

as an infrared optical window and a solar cell material. It is usually sandwiched with cadmium sulfide to

form a p-n junction photovoltaic solar cell. Typically, CdTe photovoltaic cells use a n-i-p structure.

Melting point of 1041°C Evaporation starting at 1050°C

Molar mass 240.01 g mol Density 5.85 g/cm3

Applications:

1. CdTe is used to make thin film solar cells

2. CdTe can be alloyed with mercury to make a versatile infrared detector material (HgCdTe).

CdTe alloyed with a small amount of zinc makes an excellent solid state X-ray and gamma ray

detector (CdZnTe).

3. CdTe is used as an infrared optical material for optical windows and lenses and is proven to provide a

good performance across a wide range of temperatures. An early form of CdTe for IR use was marketed

under the trademarked name of Irtran-6 but this is obsolete.

4. CdTe is also applied for electro-optic modulators. It has the greatest electro-optic coefficient of

the linear electro-optic effect among II-VI compound crystals (r41=r52=r63=6.8×10−12 m/V).

5. CdTe doped with chlorine is used as a radiation detector for x-rays, gamma rays, beta particles and

alpha particles. CdTe can operate at room temperature allowing the construction of compact detectors for

a wide variety of applications in nuclear spectroscopy

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Lead selenide PbSe granules use in thin film coating CAS 12069-00-0

Huizhou Tian Yi Rare Material Co.,Ltd — Mon, 06-Aug-12 11:59:21 GMT

Lead Selenide (PbSe) granules

Purity: 99.99%, 99.999%

Shape: shots,pellets,pieces,granules,rods,tablets

Spec.:

Tablets: 8mm dia. X 5mm L, 10mm dia. X 5mm L, 20mm dia. X 8mm L e.t.c

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Lead selenide (PbSe) is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies PbSe and other IV–VI semiconductors as indirect gap materials.) It is a grey crystalline solid material.
It is used for manufacture of infrared detectors for thermal imaging,operating at wavelengths between 1.5–5.2 µm. It does not require cooling, but performs better at lower temperatures. The peak sensitivity depends on temperature and varies between 3.7–4.7 µm.
Single crystal nanorods and polycrystalline nanotubes of lead selenide have been synthesized via controlled organism membranes. The diameter of the nanorods were approx. 45 nm and their length was up to 1100 nm, for nanotubes the diameter was 50 nm and the length up to 2000 nm.
Lead selenide nanocrystals embedded into various materials can be used as quantum dots, for example in nanocrystal solar cells.
Lead selenide is a thermoelectric material. The material was identified as a potential high temperature thermoelectric with sodium or chlorine doping by Alekseva and co-workers at the A.F. Ioffe Institute in Russia. Subsequent theoretical work at Oak Ridge National Laboratory, USA predicted that its p-type performance could equal or exceed that of the sister compound, lead telluride.Several groups have since reported thermoelectric figures of merit exceeding unity, which is the characteristic of a high performance thermoelectric.
The mineral clausthalite is a naturally occurring lead selenide.
It may be formed by direct reaction between its constituent elements (lead and selenium).

Molar mass: 286.16 g/mol Melting point: 1,078 °C (1,972 °F; 1,351 K)

Main Applications of the PbSe Detectors:

1. Industrial:
Gas analysis
Flame analysis
Infrared spectroscopy
2. Industrial process and quality control:
Glass
Plastic
Petrochemical
Automotive
Railway
Coal
Steel
3. Hot spot detection
4. High speed infrared imaging:
Turbo jet combustion
Electrical failures
Welding (laser, arc, etc.)
Spot laser characterization
Waste sorting
Food industry
5. Fire detection
6. Environmental control
7. Defense
Passive Infrared Cueing Systems
Active protection systems
Low cost seekers
Proximity fuzes
Sniper detection
Sensor Fuzed Weapons
DIRCM

We also supply below Selenide Ceramic sputtering target

Aluminum Selenide , Al2Se3 target

Antimony Selenide , Sb2Se3 target

Arsenic Selenide , As2Se3 target

Bismuth Selenide, Bi2Se3 target

Cadmium Selenide , CdSe target

Copper Selenide, CuSe, Cu2Se target

Gallium Selenide, Ga2Se3 target

Gernium Selenide, GeSe target

Indium Selenide, In2Se3 target

Lead Selenide, PbSe target

Molybdenum Selenide, MoSe2 target

Manganese Selenide, MnSe target

Niobium Selenide , NbSe2 target

Tantalum Selenide , TaSe2 target

Tungsten Selenide , WSe2 target

Zinc Selenide , ZnSe target

Gadolinium Barium Copper Oxide GdBaCuO supperconduction sputtring targets

Huizhou Tian Yi Rare Material Co.,Ltd — Thu, 02-Aug-12 17:46:04 GMT

Gadolinium Barium Copper Oxide (GdBaCuOx) sputtring targets use in supperconduction thin film coating

Purity: 99.99%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length: <500mm, Width: <250mm, Thickness: >1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

We also supply below oxie ceramic sputtering targets material:

Aluminum Oxide Al2O3 target Aluminum Zinc Oxide Al2O3-ZnO Al-ZnO target

Antimony Oxide Sb2O3 target Antimony Tin Oxide Sb2O3-SnO ATO target

Chromium Oxide Cr2O3 target Copper Oxide CuO, Cu2O target

Cobalt Oxide target CoO, Co2O3, Co3O4 target

Iron Oxide Fe2O3, Fe3O4 target

Indium Oxide In2O3 target Indium Zinc Oxide, In2O3-ZnO target

Indium Zinc Gallium Oxide In2O3-ZnO-Ga2O3, IZGO target

Indium Gallium Oxide In2O3-Ga2O3, IGO target

Indium Tin Oxide In2O3-SnO2, ITO target

Magnesium Oxide MgO target

Molybdenum Oxide MoO3 target Manganese Oxide MnO2,MnO target

Nickel Oxide NiO target Niobium Oxide Nb2O5, Nb2Ox target

Silicon Dioxide SiO2 target Silicon Monoxide SiO target

Strontium Titanate SrTiO3 target Strontium Barium Titanate SrBaTiO3 target

Strontium Ruthenate SrRuO3 target Barium Titanate BaTiO3 target

Tantalum Oxide Ta2O5, Ta2Ox target

Titanium Oxide TiO, TiO2, Ti2O3, Ti3O5 target

Tin Oxide SnO, SnO2 target

Tungsten Oxide WO3, WO2.9 target Tungsten Lithium Oxide WO3-Li2O target

Zircon Oxide ZrO2 target Zinc Oxide ZnO target

Zirconium Oxide Yttria Stabilized ZrO2-Y2O3, YSZ target

Calcium Oxide CaO target Cadmium Oxide CdO target

Doped Boron Oxide taret ZnO-B2O3, ZrO2-B2O3 target

Bismuth Oxide Bi2O3 target Bismuth Ferrite BiFeO3 target

Vanadium Oxide V2O5, VO2 target Ruthenium Oxide RuO2 target

Lead Oxide PbO target LaTiO3, SrTiO3-La, EuTiO3 target

Barium Oxide BaO target

Lead zirconate titanate PbZrTiO3, PZT target Y3Fe5O12, YIG target

We have only listed the more popular material. Please feel free contact us with any special requirements at any times, we will try to get back for you ASAP.

Zinc Telluride ZnTe sputtering targets use in Optoelectronics CAS 1315-11-3

Huizhou Tian Yi Rare Material Co.,Ltd — Sat, 08-Apr-17 19:41:39 GMT

Zinc Telluride, ZnTe sputtering targets

Purity: 99.99%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Zinc telluride ZnTe is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.

Molar mass: 192.99 g/mol Density: 6.34 g/cm3 Melting point: 1,295 °C; 2,363 °F; 1,568 K

Applications:

Optoelectronics
Zinc telluride can be easily doped, and for this reason it is one of the more common semiconducting materials used in optoelectronics. ZnTe is important for development of various semiconductor devices, including blue LEDs, laser diodes, solar cells, and components of microwave generators. It can be used for solar cells, for example, as a back-surface field layer and p-type semiconductor material for a CdTe/ZnTe structure or in PIN diode structures.
The material can also be used as a component of ternary semiconductor compounds, such as CdxZn(1-x)Te (conceptually a mixture composed from the end-members ZnTe and CdTe), which can be made with a varying composition x to allow the optical bandgap to be tuned as desired.

Nonlinear optics

Zinc telluride together with lithium niobate is often used for generation of pulsed terahertz radiation in time-domain terahertz spectroscopy and terahertz imaging. When a crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits a pulse of terahertz frequency through a nonlinear optical process called optical rectification.Conversely, subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence and change the polarization of a transmitting light, making it an electro-optic detector.
Vanadium-doped zinc telluride, "ZnTe:V", is a non-linear optical photorefractive material of possible use in the protection of sensors at visible wavelengths. ZnTe:V optical limiters are light and compact, without complicated optics of conventional limiters. ZnTe:V can block a high-intensity jamming beam from a laser dazzler, while still passing the lower-intensity image of the observed scene. It can also be used in holographic interferometry, in reconfigurable optical interconnections, and in laser optical phase conjugation devices. It offers superior photorefractive performance at wavelengths between 600–1300 nm, in comparison with other III-V and II-VI compound semiconductors. By adding manganese as an additional dopant (ZnTe:V:Mn), its photorefractive yield can be significantly increased.

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Bismuth(III) sulfide Bi2S3 granules CAS 1345-07-9

Huizhou Tian Yi Rare Material Co.,Ltd — Mon, 10-Apr-17 00:24:12 GMT

Bismuth(III) sulfide (Bi2S3) granules

Purity: 99.99%, 99.999%

Form: Vacuum melting alloy, Crystal form

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 514.16 g mol−1, Appearance: brown powder

Density: 6.78g/cm3 , Melting point: 850 oC

Applications

It is used as a starting material to produce many other bismuth compounds

We also supply below material:

Material Name Formula Purity
Tungsten Sulfide WS2 99.9%
Zinc Sulfide ZnS 99.99%
Cadmium Sulfide CdS 99.99%
Molybdenum Sulfide MoS2 99.9%
Tin Sulfide SnS, SnS2 99.99%, 99.999%
Antimony Sulfide               Sb2S3            99.99%
Lead Sulfide                         PbS              99.99%
Copper Sulfide                  CuS, Cu2S   99.99%

Copper Zinc Tin Sulfide     Cu2ZnSnS4    99.99%

Bismuth Selenide Bi2Se3 granules, powders use in semiconductor CAS 12068-69-8

Huizhou Tian Yi Rare Material Co.,Ltd — Mon, 10-Apr-17 00:32:10 GMT

Bismuth Selenide, Bi2Se3 granules and powder

Purity: 99.99%, 99.999%

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass 654.8 g mol−1, Appearance Dull gray

Density 6.82 g/cm3 , Melting point: 710 oC

Bismuth selenide (Bi2Se3) is a gray powder that is a compound of bismuth and selenium also known as bismuth(III) selenide. It is a semiconductor and a thermoelectric material. While perfect stoichiometric bismuth selenide should be a semiconductor (with a gap of 0.3 eV) naturally occurring selenium vacancies act as electron donors and it often acts as a semimetal. Topologically protected surface states have been observed in Bismuth selenide which is the subject of ongoing scientific research.

Applications

Use in compound semiconductor thin film coaitng

We also supply below Selenide Ceramic sputtering target

Aluminum Selenide , Al2Se3 target

Antimony Selenide , Sb2Se3 target

Arsenic Selenide , As2Se3 target

Bismuth Selenide, Bi2Se3 target

Cadmium Selenide , CdSe target

Copper Selenide, CuSe, Cu2Se target

Indium Selenide, In2Se3 target

Lead Selenide, PbSe target

Molybdenum Selenide, MoSe2 target

Manganese Selenide, MnSe target

Niobium Selenide , NbSe2 target

Tantalum Selenide , TaSe2 target

Tungsten Selenide , WSe2 target

Zinc Selenide , ZnSe target

Bismuth Telluride Bi2Te3 crystal CAS 1304-82-1

Huizhou Tian Yi Rare Material Co.,Ltd — Mon, 10-Apr-17 00:39:49 GMT

Bismuth Telluride Bi2Te3 crystal granules

Purity: 99.99%, 99.999%

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 800.76 g/mol Density: 7.74g/cm3 Melting point: 580 °C

Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for refrigeration or portable power generation. Bi2Te3 is a topological insulator, and thus exhibits thickness-dependent physical properties.

Applications:

Use in semiconductor thin film coating

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Silver sulfide Ag2S granules CAS 21548-73-2

Huizhou Tian Yi Rare Material Co.,Ltd — Wed, 26-Apr-17 19:18:17 GMT

Silver sulfide (Ag2S) granules

Purity: 99.99%

Form: Vacuum melting alloy, Crystal form

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass 247.80 g·mol−1 Appearance Grayish-black crystal

Odor Odorless Density 7.234 g/cm3 (25 °C) ; 7.12 g/cm3 (117 °C)

Melting point 836 °C (1,537 °F; 1,109 K)

Applications

Silver sulfide (Ag2S) is useful as a photosensitizer in photography.

We also supply below material:

Tin Telluride SnTe targets use in thermoelectric generator CAS 120404-02-7

Huizhou Tian Yi Rare Material Co.,Ltd — Wed, 03-May-17 22:45:58 GMT

Tin Telluride, SnTe sputtering targets

Purity: 99.99%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 246.31g/mol Density: 6.445g/cm3 Melting point: 790°C

SnTe is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature superconductor.

Tin telluride is a thermoelectric material. Theoretical studies imply that the n-type performance may be particularly good.

Applications:
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors and thermoelectric generator.

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Tin Telluride SnTe granules use in thermoelectric generator CAS 120404-02-7

Huizhou Tian Yi Rare Material Co.,Ltd — Wed, 03-May-17 22:55:47 GMT

Tin Telluride, SnTe sputtering targets

Purity: 99.99%

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 246.31g/mol Density: 6.445g/cm3 Melting point: 790°C

Tin telluride is a thermoelectric material. Theoretical studies imply that the n-type performance may be particularly good.

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Tin Arsenide SnAs granules CAS 39332-13-3

Huizhou Tian Yi Rare Material Co.,Ltd — Wed, 03-May-17 23:44:01 GMT

Tin Arsenide SnAs granules

Purity: 99.99%, 99.999%

Form: Vacuum melting alloy, Crystal form

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Monoisotopic Mass: 194.823 g/mol, Molecular Weight: 193.61g/cm3

We also supply below material:

Zinc Arsenide                           Zn3As2                       99.99%, 99.999%
Copper Arsenide                     Cu3As                          99.99%, 99.999%
Cobalt Arsenide                     CoAs2                           99.99%

Antimony Telluride Sb2Te3 targets CAS 1327-50-0

Huizhou Tian Yi Rare Material Co.,Ltd — Thu, 04-May-17 00:18:02 GMT

Antimony Telluride Sb2Te3 Sputtering targets

Purity: 99.99%, 99.999%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 626.32 g·mol−1            Appearance: grey solid
Density: 6.50 g cm−3                       Melting point: 620 °C (1,148 °F; 893 K)
Band gap: 0.21 eV                           Thermal conductivity: 1.65 W/(m·K) (308 K)

Sb2Te3. It is a grey crystalline solid with layered structure. Layers consist of two atomic sheets of tin and three atomic sheets of tellurium and are held together by weak van der Waals forces. Sb2Te3 is a narrow-gap semiconductor with a band gap 0.21 eV; it is also a topological insulator, and thus exhibits thickness-dependent physical properties.

Applications:
Like other binary chalcogenides of antimony and bismuth, Sb2Te3 has been investigated for its semiconductor properties. It can be transformed into both n-type and p-type semiconductors by doping with an appropriate dopant.
Sb2Te3 forms the pseudobinary intermetallic system germanium-antimony-tellurium with germanium telluride, GeTe.
Like bismuth telluride, Bi2Te3, antimony telluride has a large thermoelectric effect and is therefore used in solid state refrigerators.

We also supply below Telluride sputtering target material:

Arsenic Telluride , As2Te3 target

Antimony Telluride, SbTe, Sb2Te3 target

Bismuth Telluride , Bi2Te3, BiTe target

Bismuth Antimony Telluride , Bi-Sb-Te target

Cadmium Telluride, CdTe target

Copper Telluride , CuTe, Cu2Te target

Lead Telluride , PbTe target

Tin Telluride, SnTe target

Molybdenum Telluride, MoTe2 target

Niobium Telluride, NbTe2 target

Silver Telluride, Ag2Te target

Tantalum Telluride, TaTe2 target

Tungsten Telluride , WTe2, sputtering target

Zinc Telluride , ZnTe target

Sulfur or Sulphur (S) chunks, powder CAS 7704-34-9

Huizhou Tian Yi Rare Material Co.,Ltd — Thu, 04-May-17 00:42:40 GMT

Sulfur or Sulphur (S) chunks, powder

Purity:99.999%

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

Powder: -200 mesh, -325 mesh e.t.c

Sulfur or Sulphur (see spelling and etymology) is a chemical element with symbol S and atomic number 16. It is abundant, multivalent, and nonmetallic. Under normal conditions, sulfur atoms form cyclic octatomic molecules with a chemical formula S8. Elemental sulfur is a bright yellow crystalline solid at room temperature. Chemically, sulfur reacts with all elements except for gold, platinum, iridium, tellurium, and the noble gases.

Melting point: 388.36 K (115.21 °C, 239.38 °F)
Boiling point: 717.8 K (444.6 °C, 832.3 °F)
Density near r.t.: alpha: 2.07 g/cm3
beta: 1.96 g/cm3
gamma: 1.92 g/cm3
when liquid, at m.p.: 1.819 g/cm3

Appearance: lemon yellow sintered microcrystals

Applications:
Sulfuric acid
Other important sulfur chemistry
Fertilizer
Fine chemicals
Fungicide and pesticide
Bactericide in winemaking and food preservation
Pharmaceuticals
Mechanism of action

Yttrium Barium Copper Oxide YBaCuOx supper conduction sputtring targets

Huizhou Tian Yi Rare Material Co.,Ltd — Tue, 11-Apr-17 22:58:15 GMT

Yttrium Barium Copper Oxide (YBaCuOx) sputtring targets use in supperconduction thin film coating

Purity: 99.99%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length: <500mm, Width: <250mm, Thickness: >1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

We also supply below oxie ceramic sputtering targets material:

Aluminum Oxide Al2O3 target Aluminum Zinc Oxide Al2O3-ZnO Al-ZnO target

Antimony Oxide Sb2O3 target Antimony Tin Oxide Sb2O3-SnO ATO target

Chromium Oxide Cr2O3 target Copper Oxide CuO, Cu2O target

Cerium Oxide CeO2 Target Cobalt Oxide target CoO, Co2O3, Co3O4 target

Dysprosium Oxide Dy2O3 target Eur Oxide Eu2O3 target

Erbium Oxide Er2O3 target Germanium Oxide GeO2 target

Gadolinium Oxide Gd2O3 target Gallium Oxide Ga2O3 target

Hafnium Oxide HfO2 target Hafnium Yttrium Oxide HfO2-Y2O3 target

Holmium Oxide Ho2O3 target Iron Oxide Fe2O3, Fe3O4 target

Indium Oxide In2O3 target Indium Zinc Oxide, In2O3-ZnO target

Indium Zinc Gallium Oxide In2O3-ZnO-Ga2O3, IZGO target

Indium Gallium Oxide In2O3-Ga2O3, IGO target

Indium Tin Oxide In2O3-SnO2, ITO target Lanthanum Oxide La2O3 target

Lutetium Oxide Lu2O3 target Magnesium Oxide MgO target

Molybdenum Oxide MoO3 target Manganese Oxide MnO2,MnO target

Nickel Oxide NiO target Niobium Oxide Nb2O5, Nb2Ox target

Neodymium Oxide Nd2O3 target Praseodymium Oxide Pr6O11 target

Samarium Oxide Sm2O3 target Scandium Oxide Sc2O3 target

Silicon Dioxide SiO2 target Silicon Monoxide SiO target

Strontium Titanate SrTiO3 target Strontium Barium Titanate SrBaTiO3 target

Strontium Ruthenate SrRuO3 target Barium Titanate BaTiO3 target

Terbium Oxide Tb4O7 Target Tantalum Oxide Ta2O5, Ta2Ox target

Titanium Oxide TiO, TiO2, Ti2O3, Ti3O5 target

Thulium Oxide Tm2O3 target Tin Oxide SnO, SnO2 target

Tungsten Oxide WO3, WO2.9 target Tungsten Lithium Oxide WO3-Li2O target

Ytterbium Oxide Yb2O3 target Yttrium Oxide Y2O3 target

Zircon Oxide ZrO2 target Zinc Oxide ZnO target

Zirconium Oxide Yttria Stabilized ZrO2-Y2O3, YSZ target

Calcium Oxide CaO target Cadmium Oxide CdO target

Doped Boron Oxide taret ZnO-B2O3, ZrO2-B2O3 target

Bismuth Oxide Bi2O3 target Bismuth Ferrite BiFeO3 target

Vanadium Oxide V2O5, VO2 target Ruthenium Oxide RuO2 target

Lead Oxide PbO target LaTiO3, SrTiO3-La, EuTiO3 target

Yttrium Barium Copper Oxide YBCO taret Gadolinium Barium Copper Oxide, GdBaCuOx target

LaMnO3 target, LaSrMnOx target Barium Oxide BaO target

Lead zirconate titanate PbZrTiO3, PZT target Y3Fe5O12, YIG target

We have only listed the more popular material. Please feel free contact us with any special requirements at any times, we will try to get back for you ASAP.

Magnium Fluoride MgF2 sputtering targets CAS 7783-40-6

Huizhou Tian Yi Rare Material Co.,Ltd — Fri, 28-Nov-08 11:31:33 GMT

Magnesium Fluoride (MgF2) sputtering targets

Purity: 99.95%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Aluminium fluoride AlF3 sputtering targets CAS 7784-18-1

Huizhou Tian Yi Rare Material Co.,Ltd — Fri, 03-Aug-12 17:07:47 GMT

Aluminum Fluoride (AlF3) ceramic sputtering target

Purity: 99.9%

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length:<500mm, Width: <250mm, thickness:="">1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Aluminum fluoride (AlF3) is an inorganic compound used primarily in the production of aluminum. This

colorless solid can be prepared synthetically but also occurs in nature.

Molar mass 83.9767 g/mol (anhydrous), 101.022 g/mol (monohydrate), 138.023 (trihydrate),

Appearance: white, crystalline solid, odorless ,

Density 3.1 g/cm3 (anhydrous), 2.1 g/cm3 (monohydrate), 1.914 g/cm3 (trihydrate) ,

Melting point 1291 °C (anhydrous)(sublimes) ,

Solubility in water 0.56 g/100 mL (0 °C), 0.67 g/100 mL (20 °C), 1.72 g/100 mL (100 °C)

Applications:

Aluminum fluoride is an important additive for the production of aluminum by electrolysis. Together with

cryolite, it lowers the melting point to below 1000 °C and increases the conductivity of the solution. It is

into this molten salt that aluminum oxide is dissolved and then electrolyzed to give bulk Al metal

Aluminum fluoride is an ingredient for the production of fluoro aluminate glasses.

It is also used to inhibit fermentation.

It is a sputtering target for preparation of low index films.

Tatanlum silicide (Ta3Si5, TaSi2) ceramic sputtering target

Huizhou Tian Yi Rare Material Co.,Ltd — Tue, 14-Sep-10 17:25:07 GMT

Tantalum Silicide (Ta5Si2, TaSi2, Ta3Si5 ) Ceramic Sputtering Target

TYR material supply all kinds of ceramic sputtering target , compound semiconductor target include Oxide sputtering target , Fluoride sputtering target , Boride sputtering target , Carbide sputtering target , Nitride sputtering target , Sulfide sputtering target , Selenide sputtering target , Silicide sputtering target , Telluride sputtering target , Antimonide sputtering target , Arsenide sputtering target ......

The available made method include hot pressing , HP, , hot/cold isostatic pressing , HIP, CIP, , and vacuum melting, vacuum sintering

Spec.: Diameter: 355.6mm , 14", max. Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.

Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing

TYR will base on each different material to select the best way to made it and sure the finish ceramic sputtering target to be best.

Silicide Ceramic sputtering target

Chromium Silicide , CrSi2 target Cobalt Silicide , Co3Si target

Hafnium Silicide , HfSi2 target Molybdenum silicide, MoSi2, Mo5Si3 target

Nickel Silicide , NiSi target Niobium Silicide , Nb5Si3, NbSi2 target

Tantalum Silicide , Ta5Si3, TaSi2 target Titanium silicide, Ti5Si3, TiSi2 target

Tungsten Silicide , WSi2 target Vanadium silicide , V3Si, VSi2 target

Zirconium Silicide , ZrSi2 target

Chromium Sillicide (CrSi2) ceramic sputtering target

Huizhou Tian Yi Rare Material Co.,Ltd — Thu, 02-Aug-12 15:18:44 GMT

Chromium Silicide (CrSi2) Ceramic sputtering target

Silicide Ceramic sputtering target

Chromium Silicide , CrSi2 target Cobalt Silicide , Co3Si target

Hafnium Silicide , HfSi2 target Molybdenum silicide, MoSi2, Mo5Si3 target

Nickel Silicide , NiSi target Niobium Silicide , Nb5Si3, NbSi2 target

Tantalum Silicide , Ta5Si3, TaSi2 target Titanium silicide, Ti5Si3, TiSi2 target

Tungsten Silicide , WSi2 target Vanadium silicide , V3Si, VSi2 target

Zirconium Silicide , ZrSi2 target

The available made method include hot pressing , HP, , hot/cold isostatic pressing , HIP, CIP, , and vacuum melting, vacuum sintering

Spec.: Diameter: 355.6mm , 14", max. Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.

Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing

TYR will base on each different material to select the best way to made it and sure the finish ceramic sputtering target to be best.